Document Type
Article
Publication Date
12-23-2011
Abstract
The magnetization curve as a function of the magnetic field at 5 K showed that the magnetization in the (Ga0.995Mn0.005)N thin film was significantly enhanced due to Mn delta-doping. The magnetization curve as a function of the temperature showed that the Curie temperature of the Mn delta-doped (Ga0.995Mn0.005)N thin film was estimated to be above room temperature. The theoretical results showed that Ga vacancies near the Mn delta-doping layer were likely to cause p-type conductance in the (Ga0.995Mn0.005)N thin film. Abstract © 2011 AIP
Source Publication
AIP Conference Proceedings
Recommended Citation
Jeon, H. C., Lee, S. J., Kang, T. W., Chang, K. J., Yeo, Y. K., George, T. F., Ihm, J., & Cheong, H. (2011). Magnetic and electronic properties of thin (Ga,Mn)N films due to an embedded Mn-delta-doping layer. AIP Conference Proceedings, 1399, 653–654. https://doi.org/10.1063/1.3666546
Comments
© 2011 AIP Publishing LLC, published under an exclusive license with American Institute of Physics.
AFIT Scholar, as the repository of the Air Force Institute of Technology, furnishes the published Version of Record for this article in accordance with the sharing policy of the publisher, AIP Publishing. A 12-month embargo was observed.
This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in AIP CONFERENCE PROCEEDINGS,1399:653–654 as fully cited below and may be found at DOI: 10.1063/1.3666546
Volume 1399 covers: 30th International Conference on the Physics of Semiconductors, 25–30 July 2010, Seoul, (Korea)