Document Type
Article
Publication Date
12-23-2011
Abstract
We have investigated optical properties as a function of internal and external fields in the quantum well (QW). Optical properties of CdZnO/MgZnO QW structures are investigated by using many‐body effects. The CdZnO/MgZnO QW structure with high Cd composition is found to have smaller optical gain because the strain‐induced piezoelectric polarization and the spontaneous polarization in the well increase with the inclusion of Cd. These results demonstrate that high performance laser diode operation can be realized in CdZnO/MgZnO QW structures by reducing those polarizations adopting dipole reverse method.
Source Publication
AIP Conference Proceedings
Recommended Citation
Jeon, H. C., Lee, S. J., Kang, T. W., Park, S. H., Yeo, Y. K., & George, T. F. (2011). Internal electric fields due to piezoelectric and spontaneous polarizations in CdZnO/MgZnO quantum well. AIP Conference Proceedings, 1399(1), 581–582. https://doi.org/10.1063/1.3666513
Comments
© 2011 AIP Publishing LLC, published under an exclusive license with American Institute of Physics.
AFIT Scholar, as the repository of the Air Force Institute of Technology, furnishes the published Version of Record for this article in accordance with the sharing policy of the publisher, AIP Publishing. A 12-month embargo was observed.
This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in AIP CONFERENCE PROCEEDINGS, 1399:581-582. as fully cited below and may be found at DOI: 10.1063/1.3666513
Volume 1399 covers: 30th International Conference on the Physics of Semiconductors, 25–30 July 2010, Seoul, (Korea)