Magnetic and Electronic Properties of a Mn Delta-doping GaN Layer
Document Type
Article
Publication Date
5-2011
Abstract
The magnetization curve as a function of the magnetic field at 5 K showed that the magnetization of the Mn delta-doped (Ga0.995Mn0.005)N thin films was significantly enhanced in comparison with that of the conventionally-doped (Ga0.995Mn0.005)N thin films. The magnetization curve as a function of the temperature showed that the Curie temperature of the Mn delta-doped (Ga0.995Mn0.005)N thin films was above room temperature. The theoretical electronic results showed that Ga vacancies near the Mn delta-doping layer were likely to cause p-type conductance, indicative of an enhancement of the magnetic properties in (Ga1-xMnx)N thin films.
DOI
10.3938/jkps.58.1361
Source Publication
Journal of the Korean Physical Society
Recommended Citation
Jeon HC, Lee SJ, Kang TW, Chang KJ, Yeo YK, George TF. Magnetic and Electronic Properties of a Mn Delta-doping GaN Layer. JKPS 2011;58:1361-1364. https://doi.org/10.3938/jkps.58.1361
Comments
The "Link to Full Text" button on this page loads the published article (the version of record), hosted at the Korean Physical Society (https://www.jkps.or.kr/). The publisher retains permissions to re-use and distribute this article.
Copyright © The Korean Physical Society.