Ion dose and anneal temperature dependent studies of silicon implanted Al_xGa_1-xN

Authors

• Elizabeth A. Moore, Air Force Institute of Technology
• Yung Kee Yeo, Air Force Institute of Technology
• Mee-Yi Ryu, Kangwon National University

Document Type

Article

Publication Date

1-2012

Comments

The full article is available from the Elsevier ScienceDirect website via subscription or purchase, using the DOI link below.

Plain-text title form: Ion dose and anneal temperature dependent studies of silicon implanted AlxGa1-xN

DOI

10.1016/j.cap.2011.05.007

Source Publication

Current Applied Physics (ISSN 1567-1739)

Recommended Citation

Moore, E. A., Yeo, Y. K., & Ryu, M.-Y. (2012). Ion dose and anneal temperature dependent studies of silicon implanted AlxGa1-xN. Current Applied Physics, 12(1), 123–128. https://doi.org/10.1016/j.cap.2011.05.007