Oxygen-atom defects in 6H silicon carbide implanted using 24-MeV O³⁺ ions measured using three-dimensional positron annihilation spectroscopy system (3DPASS)

Authors

• Christopher S. Williams, Air Force Institute of Technology
• Xiaofeng F. Duan, Air Force Institute of Technology
• James C. Petrosky, Air Force Institute of Technology
• Larry W. Burggraf, Air Force Institute of TechnologyFollow

Document Type

Conference Proceeding

Publication Date

6-1-2011

Comments

© 2011 American Institute of Physics.

The full conference paper is available from AIP via subscription or purchase, using the DOI link below.

Plain-text title form: Oxygen-atom defects in 6H silicon carbide implanted using 24-MeV O 3+ ions measured using three-dimensional positron annihilation spectroscopy system (3DPASS)

DOI

10.1063/1.3586141

Source Publication

Application of Accelerators in Research and Industry: Twenty‐First International Conference

Recommended Citation

Christopher S. Williams, Xiaofeng F. Duan, James C. Petrosky, Larry W. Burggraf; Oxygen‐Atom Defects In 6H Silicon Carbide Implanted Using 24‐ MeV O³⁺ Ions Measured Using Three‐Dimensional Positron Annihilation Spectroscopy System (3DPASS). AIP Conf. Proc. 1 June 2011; 1336 (1): 458–462. https://doi.org/10.1063/1.3586141