Electrical activation studies of Silicon-implanted Al_xGa_1-xN with aluminum mole fraction of 11% to 51%

Authors

• Elizabeth A. Moore, Air Force Institute of Technology
• Yung Kee. Yeo, Air Force Institute of Technology
• Mee-Yi Ryu, Kangwon National University
• Robert L. Hengehold, Air Force Institute of Technology

Document Type

Article

Publication Date

10-22-2010

Comments

Plain text title form: Electrical activation studies of Silicon-implanted Al x Ga 1-x N with aluminum mole fraction of 11% to 51%

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DOI

10.1007/s11664-010-1394-y

Source Publication

Journal of Electronic Materials (ISSN 03615235)

Recommended Citation

Moore, E.A., Yeo, Y.K., Ryu, MY. et al. Electrical Activation Studies of Silicon-Implanted Al _x Ga_1−xN with Aluminum Mole Fraction of 11% to 51%. J. Electron. Mater. 40, 11–16 (2011). https://doi.org/10.1007/s11664-010-1394-y