Temperature-Dependent Studies of Si-Implanted Al(0.33)Ga(0.67)N with Different Annealing Temperatures and Times

Authors

• Elizabeth A. Moore, Air Force Institute of Technology
• Yung Kee Yeo, Air Force Institute of Technology
• Gregory J. Gruen, Air Force Institute of Technology
• Mee-Yi Ryu, Kangwon National University
• Robert L. Hengehold, Air Force Institute of Technology

Document Type

Article

Publication Date

1-2010

Comments

Copyright © 2009, TMS

The full article is available by subscription or purchase, using the DOI link below.

DOI

10.1007/s11664-009-0948-3

Source Publication

Journal of Electronic Materials (ISSN 0361-5235)

Recommended Citation

Moore, E., Yeo, Y., Gruen, G. et al. Temperature-Dependent Studies of Si-Implanted Al0.33Ga0.67N with Different Annealing Temperatures and Times. J. Electron. Mater. 39, 21–28 (2010). https://doi.org/10.1007/s11664-009-0948-3