Resonant photoemission of rare earth doped GaN thin films

Authors

• Stephen R. McHale, Air Force Institute of Technology
• John W. McClory, Air Force Institute of Technology
• James C. Petrosky, Air Force Institute of Technology
• J. Wu, University of Puerto Rico
• R. Palai, University of Puerto Rico
• Yaroslav B. Losovyj, Louisiana State University
• Peter A. Dowben, University of Nebraska-Lincoln

Document Type

Article

Publication Date

9-28-2011

Comments

© EDP Sciences, 2011

The full article is available by subscription or purchase, using the DOI link below.

DOI

10.1051/epjap/2011110235

Source Publication

The European Physical Journal Applied Physics (ISSN 1286-0042)

Recommended Citation

McHale, S. R., McClory, J. W., Petrosky, J. C., Wu, J., Palai, R., Losovyj, Ya. B., & Dowben, P. A. (2011). Resonant photoemission of rare earth doped GaN thin films. The European Physical Journal Applied Physics, 56(1), 11301. https://doi.org/10.1051/epjap/2011110235