Schottky barrier formation at the Au to rare earth doped GaN thin film interface
Document Type
Article
Publication Date
8-18-2011
Abstract
The Schottky barriers formed at the interface between gold and various rare earth doped GaN thin films (RE = Yb, Er, Gd) were investigated in situ using synchrotron photoemission spectroscopy. The resultant Schottky barrier heights were measured as 1.68 ± 0.1 eV (Yb:GaN), 1.64 ± 0.1 eV (Er:GaN), and 1.33 ± 0.1 eV (Gd:GaN). We find compelling evidence that thin layers of gold do not wet and uniformly cover the GaN surface, even with rare earth doping of the GaN. Furthermore, the trend of the Schottky barrier heights follows the trend of the rare earth metal work function.
Source Publication
The European Physical Journal Applied Physics (ISSN 1286-0042 | eISSN 1286-0050)
Recommended Citation
McHale, S. R., McClory, J. W., Petrosky, J. C., Wu, J., Palai, R., Dowben, P. A., & Ketsman, I. (2011). The effective surface Debye temperature of Yb:GaN. Materials Letters, 65(10), 1476–1478. https://doi.org/10.1016/j.matlet.2011.02.042
Comments
© EDP Sciences, 2011
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Co-author S. McHale was an AFIT PhD candidate at the time of this article. (AFIT-DS-ENP-11-S05, September 2011)