Optical and Electrical Properties of Bulk-grown Ternary InxGa1-xAs
Document Type
Article
Publication Date
5-2011
Abstract
Bulk ternary InxGa1−xAs polycrystals were grown using the vertical Bridgman technique. The optical and electrical properties of these bulk InxGa1−xAs were investigated as a function of indium mole fraction from 0.75 to 0.99 by using photoluminescence (PL) and Hall-effect measurements. All samples showed good infrared transmission. A free exciton (FX) transition peak was observed from all bulk InxGa1−xAs samples, and it redshifted from 0.568 to 0.412 eV as the indium mole fraction increased from 0.75 to 0.99. Bandgaps estimated from the indium composition-and temperature-dependent FX peaks generally followed the theoretically calculated bandgaps. All as-grown InxGa1−xAs samples showed n-type conductivity. Although all bulk InxGa1−xAs samples showed good optical transmissions and PL transitions, as well as high carrier mobilities, they exhibited some random compositional fluctuations across the sample area.
Source Publication
Journal of the Korean Physical Society (ISSN 0374-4884)
Recommended Citation
Yeo, Y. K., Bergstrom, A. C., Hengehold, R. L., Wei, J. W., Guha, S., Gonzalez, L. P., Rajagopalan, G., & Ryu, M.-Y. (2011). Optical and electrical properties of bulk-grown ternary InxGa1-xAs. Journal of the Korean Physical Society, 58(5(1)), 1267–1273. https://doi.org/10.3938/jkps.58.1267
Comments
Plain-text title form: Optical and Electrical Properties of Bulk-grown Ternary In(x)Ga(1-x)As
Cited from INSPEC record 12548523.
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