Effects of non-ionizing radiation on a 130 nm CMOS SRAM for low earth orbit applications

Authors

Christopher I. Allen, Air Force Institute of Technology
James C. Petrosky, Air Force Institute of Technology
P. Len Orlando, Air Force Research Laboratory

Document Type

Conference Proceeding

Publication Date

6-24-2014

Abstract

This research predicts the effects of the natural radiation environment in low earth orbit on a 6T SRAM cell designed using the CMOS portion of a 130 nm BiCMOS technology. It is determined that this technology is quite sensitive to single event upset (SEU): at 200 km altitude and without shielding, the predicted SEU rate is 6.7×10^-3 bit^-1yr^-1; at 2000 km altitude, the rate increases to 1.9×10¹ bit^-1yr^-1. Nonetheless, these results compare favorably to previously published SEU data [1], [2] regarding the bipolar portion of similar BiCMOS technology.

Comments

Copyright © 2014, IEEE

This conference paper is published by IEEE and is accessible by subscription or purchase using the DOI link on this page.

Author note: Christopher I. Allen was an AFIT PhD student at the time of this conference. (AFIT-ENG-DS-15-D-001, December 2015)

DOI

10.1109/NAECON.2014.7045835

Source Publication

NAECON 2014 - IEEE National Aerospace and Electronics Conference

Recommended Citation

C. I. Allen, J. C. Petrosky and P. L. Orlando, "Effects of non-ionizing radiation on a 130 nm CMOS SRAM for low earth orbit applications," NAECON 2014 - IEEE National Aerospace and Electronics Conference, Dayton, OH, USA, 2014, pp. 351-356, doi: 10.1109/NAECON.2014.7045835.