Document Type
Article
Publication Date
11-25-2019
Abstract
Radiation effects on graphene field effect transistors (GFETs) with hexagonal boron nitride (h-BN) thin film substrates are investigated using 60Co gamma-ray radiation. This study examines the radiation response using many samples with varying h-BN film thicknesses (1.6 and 20 nm thickness) and graphene channel lengths (5 and 10 μm). These samples were exposed to a total ionizing dose of approximately 1 Mrad(Si). I-V measurements were taken at fixed time intervals between irradiations and postirradiation. Dirac point voltage and current are extracted from the I-V measurements, as well as mobility, Dirac voltage hysteresis, and the total number of GFETs that remain properly operational. The results show a decrease in Dirac voltage during irradiation, with a rise of this voltage and permanent drop in Dirac current postirradiation. 1.6 nm h-BN substrate GFETs show an increase in mobility during irradiation, which drops back to preirradiation conditions in postirradiation measurements. Hysteretic changes to the Dirac voltage are the strongest during irradiation for the 20 nm thick h-BN substrate GFETs and after irradiation for the 1.6 nm thick h-BN GFETs. Failure rates were similar for most GFET types during irradiation; however, after irradiation, GFETs with 20 nm h-BN substrates experienced substantially more failures compared to 1.6 nm h-BN substrate GFETs.
DOI
10.1063/1.5127895
Source Publication
Applied Physics Letters
Recommended Citation
Cazalas, E. J., Hogsed, M. R., Vangala, S., Snure, M. R., & McClory, J. W. (2019). Gamma-ray radiation effects in graphene-based transistors with h-BN nanometer film substrates. Applied Physics Letters, 115(22), 223504. https://doi.org/10.1063/1.5127895
Included in
Electrical and Electronics Commons, Nanoscience and Nanotechnology Commons, Nuclear Commons
Comments
© 2019 Author(s), published under an exclusive license with American Institute of Physics.
AFIT Scholar, as the repository of the Air Force Institute of Technology, furnishes the published Version of Record for this article in accordance with the sharing policy of the publisher, AIP Publishing. A 12-month embargo was observed.
This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Applied Physics Letters, 115, 223504 as fully cited below and may be found at 10.1063/1.5127895.
Funding notes: The authors would like to thank the staff of the Ohio State University Nuclear Reactor Laboratory for their support of this research. This work was supported at the Air Force Institute of Technology by the Air Force Research Laboratory Sensors Directorate, AFRL/RYDH. The work done at AFRL was funded by the Air Force Office of Scientific Research under Award No. FA9550-16RYCOR331.