Electrical and Material Properties of Hydrothermally Grown Single Crystal (111) UO2
Document Type
Article
Publication Date
2018
Abstract
The semiconductor and optical properties of UO2 are investigated. The very long drift carrier lifetimes, obtained from current–voltage I(V) and capacitance–voltage C(V) measurements, along with the well-defined optical properties provide little evidence of an abundance of material defects away from the surface region. Schottky barrier formation may be possible, but very much dependent on the choice of contact and surface stoichiometry and we find that Ohmic contacts are in fact favored. Depth resolved photoemission provided evidence of a chemical shift at the surface. Density functional theory, with the Heyd-Scuseria-Ernzerhof (HSE) functional, indicates a band gap of a 2.19 eV and an anti-ferromagnetic ground state. Ellipsometry measurements indicates at UO2 is relatively isotropic with a band gap of approximately 2.0 eV band gap, consistent with theoretical expectations.
DOI
10.1140/epjb/e2018-80489-x
Source Publication
European Physical Journal B
Recommended Citation
Dugan, C.L., Peterson, G.G., Mock, A. et al. Electrical and material properties of hydrothermally grown single crystal (111) UO2. Eur. Phys. J. B 91, 67 (2018). https://doi.org/10.1140/epjb/e2018-80489-x
Comments
Copyright statement: © EDP Sciences, Società Italiana di Fisica, Springer-Verlag 2018.
The "Link to Full Text" button on this page loads the journal article hosted at the publisher’s website. Provided by the Springer Nature SharedIt content sharing program. Please attribute the work using the citation indicated below.