Magnetic and Electronic Properties of a Mn Delta-doping GaN Layer
The magnetization curve as a function of the magnetic field at 5 K showed that the magnetization of the Mn delta-doped (Ga0.995Mn0.005)N thin films was significantly enhanced in comparison with that of the conventionally-doped (Ga0.995Mn0.005)N thin films. The magnetization curve as a function of the temperature showed that the Curie temperature of the Mn delta-doped (Ga0.995Mn0.005)N thin films was above room temperature. The theoretical electronic results showed that Ga vacancies near the Mn delta-doping layer were likely to cause p-type conductance, indicative of an enhancement of the magnetic properties in (Ga1-xMnx)N thin films.
Journal of the Korean Physical Society
Jeon HC, Lee SJ, Kang TW, Chang KJ, Yeo YK, George TF. Magnetic and Electronic Properties of a Mn Delta-doping GaN Layer. JKPS 2011;58:1361-1364. https://doi.org/10.3938/jkps.58.1361