Title

Magnetic and Electronic Properties of a Mn Delta-doping GaN Layer

Document Type

Article

Publication Date

5-2011

Abstract

The magnetization curve as a function of the magnetic field at 5 K showed that the magnetization of the Mn delta-doped (Ga0.995Mn0.005)N thin films was significantly enhanced in comparison with that of the conventionally-doped (Ga0.995Mn0.005)N thin films. The magnetization curve as a function of the temperature showed that the Curie temperature of the Mn delta-doped (Ga0.995Mn0.005)N thin films was above room temperature. The theoretical electronic results showed that Ga vacancies near the Mn delta-doping layer were likely to cause p-type conductance, indicative of an enhancement of the magnetic properties in (Ga1-xMnx)N thin films.

Comments

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Copyright © The Korean Physical Society.

DOI

10.3938/jkps.58.1361

Source Publication

Journal of the Korean Physical Society

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