Epitaxial silicon microshell vacuum-encapsulated CMOS-compatible 200 MHz bulk-mode resonator
This paper shows the first successful combination of dielectrically-transduced 200 MHz resonators with the epi-silicon encapsulation process, and demonstrates a set of important capabilities needed for the construction of CMOS-compatible RF MEMS components. The result shows the resonant frequency of 207 MHz and a quality factor of 6,400. The high fxQ (1.2 x 1012 Hz) makes this encapsulated resonator an excellent candidate for applications in local oscillators and RF spectrum analyzers.
The 22nd IEEE International Conference on Micro Electro Mechanical Systems (IEEE MEMS 2009)
Kuan-Lin Chen, Hengky Chandrahalim, Andrew B. Graham, Sunil A. Bhave, Roger T. Howe, and Thomas W. Kenny, "Epitaxial silicon microshell vacuum-encapsulated CMOS-compatible 200 MHz bulk-mode resonator," IEEE International Conference on Micro Electro Mechanical Systems, 2009, pp. 23-26.
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