Title
Epitaxial silicon microshell vacuum-encapsulated CMOS-compatible 200 MHz bulk-mode resonator
Document Type
Conference Proceeding
Publication Date
2009
Abstract
This paper shows the first successful combination of dielectrically-transduced 200 MHz resonators with the epi-silicon encapsulation process, and demonstrates a set of important capabilities needed for the construction of CMOS-compatible RF MEMS components. The result shows the resonant frequency of 207 MHz and a quality factor of 6,400. The high fxQ (1.2 x 1012 Hz) makes this encapsulated resonator an excellent candidate for applications in local oscillators and RF spectrum analyzers.
DOI
10.1109/MEMSYS.2009.4805309
Source Publication
The 22nd IEEE International Conference on Micro Electro Mechanical Systems (IEEE MEMS 2009)
Recommended Citation
Kuan-Lin Chen, Hengky Chandrahalim, Andrew B. Graham, Sunil A. Bhave, Roger T. Howe, and Thomas W. Kenny, "Epitaxial silicon microshell vacuum-encapsulated CMOS-compatible 200 MHz bulk-mode resonator," IEEE International Conference on Micro Electro Mechanical Systems, 2009, pp. 23-26.
Comments
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