Epitaxial silicon microshell vacuum-encapsulated CMOS-compatible 200 MHz bulk-mode resonator

Document Type

Conference Proceeding

Publication Date



This paper shows the first successful combination of dielectrically-transduced 200 MHz resonators with the epi-silicon encapsulation process, and demonstrates a set of important capabilities needed for the construction of CMOS-compatible RF MEMS components. The result shows the resonant frequency of 207 MHz and a quality factor of 6,400. The high fxQ (1.2 x 1012 Hz) makes this encapsulated resonator an excellent candidate for applications in local oscillators and RF spectrum analyzers.


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Source Publication

The 22nd IEEE International Conference on Micro Electro Mechanical Systems (IEEE MEMS 2009)

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