Epitaxial silicon microshell vacuum-encapsulated CMOS-compatible 200 MHz bulk-mode resonator

Authors

Kuan-Lin Chen, Stanford University
Hengky Chandrahalim, Air Force Institute of TechnologyFollow
Andrew B. Graham, Stanford University
Sunil A. Bhave, Purdue University
Roger T. Howe, Stanford University
Thomas W. Kenny, Stanford University

Document Type

Conference Proceeding

Publication Date

2009

Abstract

This paper shows the first successful combination of dielectrically-transduced 200 MHz resonators with the epi-silicon encapsulation process, and demonstrates a set of important capabilities needed for the construction of CMOS-compatible RF MEMS components. The result shows the resonant frequency of 207 MHz and a quality factor of 6,400. The high fxQ (1.2 x 10¹² Hz) makes this encapsulated resonator an excellent candidate for applications in local oscillators and RF spectrum analyzers.

Comments

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DOI

10.1109/MEMSYS.2009.4805309

Source Publication

The 22nd IEEE International Conference on Micro Electro Mechanical Systems (IEEE MEMS 2009)

Recommended Citation

Kuan-Lin Chen, Hengky Chandrahalim, Andrew B. Graham, Sunil A. Bhave, Roger T. Howe, and Thomas W. Kenny, "Epitaxial silicon microshell vacuum-encapsulated CMOS-compatible 200 MHz bulk-mode resonator," IEEE International Conference on Micro Electro Mechanical Systems, 2009, pp. 23-26.