PZT thin films for RF MEMS applications

Authors

Ronald G. Polcawich, Army Research Laboratory
Jeff Pulskamp, Army Research Laboratory
Dan Judy, Army Research Laboratory
Roger Kaul, Army Research Laboratory
Madan Dubey, Army Research Laboratory
Hengky Chandrahalim, Air Force Institute of TechnologyFollow
Sunil A. Bhave, Purdue University

Document Type

Conference Proceeding

Publication Date

2008

Abstract

In this article, we report on the successful demonstration of lead zirconate titanate (PZT) thin film based MEMS devices for use in radio frequency (RF) systems. Both series and shunt switches operating at or below 10 V and 15 V, respectively, have been developed capable of operating over a wide temperature range. These switches have also been integrated into a 17 GHz, 2-bit reflection phase shifter with an average insertion loss of 2.96 dB. Along with switches and phase shifters, PZT based MEMS resonators show promise in the sub-GHz regime with demonstrated insertion loss values near -12 dB and theoretical predictions approaching better than -3 dB.

Comments

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DOI

10.1109/ISAF.2008.4693748

Source Publication

17th IEEE International Symposium on the Applications of Ferroelectrics (ISAF 2008)

Recommended Citation

Ronald G. Polcawich, Jeff Pulskamp, Dan Judy, Roger Kaul, Madan Dubey, Hengky Chandrahalim, and Sunil A. Bhave, "PZT thin films for RF MEMS applications," International Symposium on the Applications of Ferroelectrics (ISAF 2008) and 2008 Meeting of the Electronics Division of the American Ceramic Society, 2008, pp. 1-2.