PZT thin films for RF MEMS applications
In this article, we report on the successful demonstration of lead zirconate titanate (PZT) thin film based MEMS devices for use in radio frequency (RF) systems. Both series and shunt switches operating at or below 10 V and 15 V, respectively, have been developed capable of operating over a wide temperature range. These switches have also been integrated into a 17 GHz, 2-bit reflection phase shifter with an average insertion loss of 2.96 dB. Along with switches and phase shifters, PZT based MEMS resonators show promise in the sub-GHz regime with demonstrated insertion loss values near -12 dB and theoretical predictions approaching better than -3 dB.
17th IEEE International Symposium on the Applications of Ferroelectrics (ISAF 2008)
Ronald G. Polcawich, Jeff Pulskamp, Dan Judy, Roger Kaul, Madan Dubey, Hengky Chandrahalim, and Sunil A. Bhave, "PZT thin films for RF MEMS applications," International Symposium on the Applications of Ferroelectrics (ISAF 2008) and 2008 Meeting of the Electronics Division of the American Ceramic Society, 2008, pp. 1-2.