Influence of silicon on quality factor, motional impedance and tuning range of PZT-transduced resonators

Authors

Hengky Chandrahalim, Air Force Institute of TechnologyFollow
Sunil A. Bhave, Purdue UniversityFollow
Ronald G. Polcawich, Army Research LaboratoryFollow
Jeff Pulskamp, Army Research LaboratoryFollow
Dan Judy, Army Research Laboratory
Roger Kaul, Army Research Laboratory
Madan Dubey, Army Research Laboratory

Document Type

Conference Proceeding

Publication Date

2008

Abstract

This paper provides a quantitative comparison and explores the design space of PZT-only (Lead Zirconium Titanate) and PZT-on-Silicon length-extensional mode resonators for incorporation into RF MEMS filters and oscillators. We experimentally measured the correlation of motional impedance (R_X) and quality factor (Q) with the resonators’ silicon layer thickness (t_Si). For identical lateral dimensions and PZT-layer thickness (t_PZT), the PZT-on-Silicon resonator has higher resonant frequency (dominated by silicon), higher Q (5,100 vs. 140) and lower motional impedance (51 Ω vs. 205 Ω). However, PZT-only resonator demonstrated much wider frequency tuning range (5.1% vs. 0.2%).

Comments

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DOI

10.31438/trf.hh2008.93

Source Publication

Solid State Sensor, Actuator and Microsystems Workshop 2008 (Hilton Head 2008)

Recommended Citation

Hengky Chandrahalim, Sunil A. Bhave, Ronald G. Polcawich, Jeff Pulskamp, Dan Judy, Roger Kaul, and Madan Dubey, "Influence of silicon on quality factor, motional impedance and tuning range of PZT-transduced resonators," Solid State Sensor, Actuator and Microsystems Workshop (Hilton Head 2008), 2008, pp. 360-363.