Temperature-dependent direct transition energy in Ge_0.99Sn_0.01 film grown on Si measured by photoreflectance spectroscopy

Authors

• Hyun-Jun Jo, Yeungnam University
• Mo Guen So, Yeungnam University
• Jong Su Kim, Yeungnam University
• Mee-Yi Ryu, Kangwon National University
• Yung Kee Yeo, Air Force Institute of Technology
• John Kouvetakis, Arizona State University

Document Type

Article

Publication Date

9-30-2015

Comments

The full article is available from Elsevier ScienceDirect via subscription or purchase, using the DOI link below.

Plain-text title form: Temperature-dependent direct transition energy in Ge0.99Sn0.01 film grown on Si measured by photoreflectance spectroscopy

DOI

10.1016/j.tsf.2015.06.008

Source Publication

Thin Solid Films (ISSN 0040-6090)

Recommended Citation

Jo, H.-J., So, M. G., Kim, J. S., Ryu, M.-Y., Yeo, Y. K., & Kouvetakis, J. (2015). Temperature-dependent direct transition energy in Ge0.99Sn0.01 film grown on Si measured by photoreflectance spectroscopy. Thin Solid Films, 591(Part B), 295–300. https://doi.org/10.1016/j.tsf.2015.06.008