This paper provides a quantitative comparison and explores the design space of lead zirconium titanate (PZT)–only and PZT-on-silicon length-extensional mode resonators for incorporation into radio frequency microelectromechanical system filters and oscillators. We experimentally measured the correlation of motional impedance (RX) and quality factor (Q) with the resonators’ silicon layer thickness (tSi). For identical lateral dimensions and PZT-layer thicknesses (tPZT), the PZT-on-silicon resonator has higher resonant frequency (fC), higher Q (5100 versus 140), lower RX (51 Ω versus 205 Ω), and better linearity [third-order input intercept point (IIP3) of +43.7 dBm versus +23.3 dBm]. In contrast, the PZT-only resonator demonstrated much wider frequency tuning range (5.1% versus 0.2%).
Applied Physics Letters
Chandrahalim, H., Bhave, S. A., Polcawich, R., Pulskamp, J., Judy, D., Kaul, R., & Dubey, M. (2008). Performance comparison of Pb(Zr0.52Ti0.48)O3-only and Pb(Zr0.52Ti0.48)O3-on-silicon resonators. Applied Physics Letters, 93(23), 233504. https://doi.org/10.1063/1.3046717