PZT transduction of high-overtone contour-mode resonators

Authors

Hengky Chandrahalim, Air Force Institute of TechnologyFollow
Sunil A. Bhave
Ronald G. Polcawich
Jeffrey S. Pulskamp
Roger Kaul

Document Type

Article

Publication Date

2010

Abstract

This paper presents the Butterworth-van Dyke model and quantitative comparison that explore the design space of lead zirconate titanate-only (PZT) and PZT on 3-, 5-, and 10-μm single-crystal silicon (SCS) high-overtone width-extensional mode (WEM) resonators with identical lateral dimensions for incorporation into radio frequency microelectromechanical systems (RF MEMS) filters and oscillators. A novel fabrication technique was developed to fabricate the resonators with and without a silicon carrier layer using the same mask set on the same wafer. The air-bridge metal routings were implemented to carry electrical signals while avoiding large capacitances from the bond-pads. We theoretically derived and experimentally measured the correlation of motional impedance (R_X), quality factor (Q), and resonance frequency (f) with the resonators' silicon layer thickness (t_Si) up to frequencies of operation above 1 GHz.

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DOI

10.1109/TUFFC.2010.1651

Source Publication

IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control

Recommended Citation

Hengky Chandrahalim, Sunil A. Bhave, Ronald G. Polcawich, Jeffrey S. Pulskamp, and Roger Kaul, "PZT transduction of high-overtone contour-mode resonators," IEEE Trans. Ultrason. Ferroelectr. Freq. Control, 57, 2010, pp. 2035-2041.