Homojunction p-n photodiodes based on As-doped single ZnO nanowire

Authors

• Hak Dong Cho, Dongguk University
• Anvar S. Zakirov, Dongguk University
• Shavkat U. Yuldashev, Dongguk University
• Chi Won Ahn, National Nanofab Center at KAIST
• Yung-Kee Yeo, Air Force Institute of Technology
• Tae Won Kang, Dongguk University

Document Type

Conference Proceeding

Publication Date

7-29-2013

Comments

© 2013 AIP Publishing LLC.

The full paper is available via subscription or purchase using the DOI link below.

Event: 31st International Conference on the Physics of Semiconductors (ICPS) 2012, Zurich, Switzerland.

DOI

10.1063/1.4848280

Source Publication

31st International Conference on the Physics of Semiconductors, ICPS 2012

Recommended Citation

Cho, H. D., Zakirov, A. S., Yuldashev, S. U., Ahn, C. W., Yeo, Y. K., & Kang, T. W. (2013). Homojunction p-n photodiodes based on As-doped single ZnO nanowire. 31st International Conference on the Physics of Semiconductors, ICPS 2012, AIP Conference Proceedings 1566, 51–52. https://doi.org/10.1063/1.4848280