The Properties of germanium-tin alloys for infrared device applications

Authors

• James Kolodzey, University of Delaware
• Matt Coppinger, University of Delaware
• Sangcheol Kim, University of Delaware
• Nupur Bhargava, University of Delaware
• Jay Gupta, University of Delaware
• Chaoying Ni, University of Delaware
• Yung-Kee Yeo, Air Force Institute of Technology

Document Type

Conference Proceeding

Publication Date

12-7-2011

Comments

Copyright © 2011, IEEE. The full conference paper is available from IEEE via subscription or purchase, using the DOI link below.

DOI

10.1109/ISDRS.2011.6135273

Source Publication

2011 International Semiconductor Device Research Symposium (ISDRS)

Recommended Citation

J. Kolodzey et al., "The Properties of germanium-tin alloys for infrared device applications," 2011 International Semiconductor Device Research Symposium (ISDRS), College Park, MD, USA, 2011, pp. 1-1, doi: 10.1109/ISDRS.2011.6135273.