Nearly Perfect Electrical Activation Efficiencies from Silicon-Implanted Al_xGa_1-xN with High Aluminum Mole Fraction

Authors

• Elizabeth A. Moore, Air Force Institute of Technology
• Yung Kee. Yeo, Air Force Institute of Technology
• Mee-Yi Ryu, Kangwon National University
• Robert L. Hengehold, Air Force Institute of Technology

Document Type

Article

Publication Date

1-2009

Comments

Copyright © 2008, TMS

The full article is available by subscription or purchase, using the DOI link below.

Plain-text title form: Nearly Perfect Electrical Activation Efficiencies from Silicon-Implanted Al (x) Ga(1-x) N with High Aluminum Mole Fraction

DOI

10.1007/s11664-008-0553-x

Source Publication

Journal of Electronic Materials (ISSN 0361-5235)

Recommended Citation

Moore, E., Yeo, Y., Ryu, MY. et al. Nearly Perfect Electrical Activation Efficiencies from Silicon-Implanted Al x Ga1−x N with High Aluminum Mole Fraction. J. Electron. Mater. 38, 153–158 (2009). https://doi.org/10.1007/s11664-008-0553-x