Activation Studies of Si-Implanted Al_0.45Ga_0.55N by Using Cathodoluminescence and Temperature-Dependent Hall-Effect Measurements

Authors

• Mee-Yi Ryu, Kangwon National University
• Elizabeth A. Moore, Air Force Institute of Technology
• Yung Kee Yeo, Air Force Institute of Technology
• Robert L. Hengehold, Air Force Institute of Technology

Document Type

Article

Publication Date

12-15-2009

Comments

Plain-text title form: Activation Studies of Si-Implanted Al0.45Ga0.55N by Using Cathodoluminescence and Temperature-Dependent Hall-Effect Measurements

DOI

10.3938/jkps.55.2465

Source Publication

Journal of the Korean Physical Society (ISSN 0374-4884 | eISSN 1976-8524)

Recommended Citation

Moore, E. A., Yeo, Y. K., Hengehold, R. L., & Ryu, M.-Y. (2009). Activation studies of si-implanted al0. 45ga0. 55n by using cathodoluminescence and temperature-dependent hall-effect measurements. Journal of the Korean Physical Society, 55(6), 2465–2469. https://doi.org/10.3938/jkps.55.2465