A Very Robust AlGaN/GaN HEMT Technology to High Forward Gate Bias and Current

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Reports to date of GaN HEMTs subjected to forward gate bias stress include varied extents of degradation. We report an extremely robust GaN HEMT technology that survived—contrary to conventional wisdom—high forward gate bias (+6 V) and current (>1.8 A/mm) for >17.5 hours exhibiting only a slight change in gate diode characteristic, little decrease in maximum drain current, with only a 0.1 V positive threshold voltage shift, and, remarkably, a persisting breakdown voltage exceeding 200 V.


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This is an open access article published by Hindawi and distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. CC BY 3.0

Funding note: This research was funded by the Aerospace Components and Subsystems Division, Sensors Directorate, Air Force Research Laboratory (AFRL/RYD).



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Active and Passive Electronic Components