Document Type

Article

Publication Date

8-28-2012

Abstract

Reports to date of GaN HEMTs subjected to forward gate bias stress include varied extents of degradation. We report an extremely robust GaN HEMT technology that survived—contrary to conventional wisdom—high forward gate bias (+6 V) and current (>1.8 A/mm) for >17.5 hours exhibiting only a slight change in gate diode characteristic, little decrease in maximum drain current, with only a 0.1 V positive threshold voltage shift, and, remarkably, a persisting breakdown voltage exceeding 200 V.

Comments

This is an open access article published by Hindawi and distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. CC BY 3.0

Sourced from the published version of record cited below.

DOI

10.1155/2012/493239

Source Publication

Active and Passive Electronic Components

Share

COinS