Document Type

Article

Publication Date

8-28-2012

Abstract

Reports to date of GaN HEMTs subjected to forward gate bias stress include varied extents of degradation. We report an extremely robust GaN HEMT technology that survived—contrary to conventional wisdom—high forward gate bias (+6 V) and current (>1.8 A/mm) for >17.5 hours exhibiting only a slight change in gate diode characteristic, little decrease in maximum drain current, with only a 0.1 V positive threshold voltage shift, and, remarkably, a persisting breakdown voltage exceeding 200 V.

Comments

Sourced from the version of record at Hindawi:
Christiansen, B. D., Heller, E. R., Coutu, R. A., Vetury, R., & Shealy, J. B. (2012). A Very Robust AlGaN/GaN HEMT Technology to High Forward Gate Bias and Current. Active and Passive Electronic Components, 2012, 1–4. https://doi.org/10.1155/2012/493239

This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. CC BY 3.0. http://creativecommons.org/licenses/by/3.0/

DOI

10.1155/2012/493239

Source Publication

Active and Passive Electronic Components

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