A Very Robust AlGaN/GaN HEMT Technology to High Forward Gate Bias and Current
Document Type
Article
Publication Date
8-28-2012
Abstract
Reports to date of GaN HEMTs subjected to forward gate bias stress include varied extents of degradation. We report an extremely robust GaN HEMT technology that survived—contrary to conventional wisdom—high forward gate bias (+6 V) and current (>1.8 A/mm) for >17.5 hours exhibiting only a slight change in gate diode characteristic, little decrease in maximum drain current, with only a 0.1 V positive threshold voltage shift, and, remarkably, a persisting breakdown voltage exceeding 200 V.
DOI
10.1155/2012/493239
Source Publication
Active and Passive Electronic Components
Recommended Citation
Christiansen, B. D., Heller, E. R., Coutu, R. A., Vetury, R., & Shealy, J. B. (2012). A Very Robust AlGaN/GaN HEMT Technology to High Forward Gate Bias and Current. Active and Passive Electronic Components, 2012, 1–4. https://doi.org/10.1155/2012/493239
Comments
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This is an open access article published by Hindawi and distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. CC BY 3.0
Funding note: This research was funded by the Aerospace Components and Subsystems Division, Sensors Directorate, Air Force Research Laboratory (AFRL/RYD).