Evaluating neutron induced displacement damage in gallium oxide based rectifiers

Authors

• Aaron J. Ferguson, Air Force Institute of TechnologyFollow
• John W. McClory, Air Force Institute of TechnologyFollow
• J. S. Li, Micron Technologies
• Chao-Ching Chiang, University of Florida
• Jsiao-Hsuan Wan, University of Florida
• Fan Ren, University of Florida

Document Type

Article

Publication Date

5-2026

Abstract

Excerpt:
This study investigates the effects of reactor-neutron irradiation on the electrical characteristics of NiO/Ga₂O₃ heterojunction diodes (HJDs) and Ni/Ga₂O₃ Schottky barrier diodes (SBDs) for 1 MeV (Ga₂O₃) equivalent neutron fluences from 6.17 x 10¹¹ to 6.17 x 10¹⁴ n/cm².

Comments

The full article is available from the American Institute of Physics (AIP) by subscription or purchase, using the DOI link below.

DOI

10.1116/6.0005344

Source Publication

Journal of Vacuum Science & Technology A (ISSN 0734-2101 | eISSN 1520-8559)

Recommended Citation

Aaron J. Ferguson, John W. McClory, J. S. Li, Chao-Ching Chiang, Jsiao-Hsuan Wan, Fan Ren; Evaluating neutron induced displacement damage in gallium oxide based rectifiers. J. Vac. Sci. Technol. A 1 May 2026; 44 (3): 032801. https://doi.org/10.1116/6.0005344