Temperature Dependent Electrical Characteristics of Neutron Irradiated AlGaN/GaN HFETs

Authors

John W. McClory, Air Force Institute of TechnologyFollow
James C. Petrosky, Air Force Institute of Technology

Document Type

Article

Publication Date

12-31-2007

Abstract

Low temperature neutron irradiated Al0.27Ga0.73N/GaN heterostructures reveal a complex temperature dependent displacement damage formation process. This process results in differences in drain currents at low (80 K) versus high (294 K) temperatures. Irradiation increases the gate and drain currents at 80 K, and decreases the drain current at room temperature. These effects saturate at ~ 3 times 1010 n/cm2 indicating complexing with a native impurity. After a room temperature anneal, the effect on the gate current persists and the drain current partially recovers. A two-step persistent interface trap formation model is presented that explains these results. This model is further supported by CV measurements at 80 K and 294 K after annealing.

Comments

Copyright © 2008, IEEE.

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DOI

10.1109/TNS.2007.910852

Source Publication

IEEE Transactions on Nuclear Science (ISSN 0018-9499)

Recommended Citation

J. W. McClory and J. C. Petrosky, "Temperature Dependent Electrical Characteristics of Neutron Irradiated AlGaN/GaN HFETs," in IEEE Transactions on Nuclear Science, vol. 54, no. 6, pp. 1969-1974, Dec. 2007, doi: 10.1109/TNS.2007.910852.