Surface Charging of n-type Gd₂O₃ and HfO₂ thin films

Authors

David J. Wooten, Air Force Institute of Technology
Yaroslav B. Losovyj, University of Nebraska - Lincoln
James C. Petrosky, Air Force Institute of Technology
John W. McClory, Air Force Institute of TechnologyFollow
Jinke Tang, University of Wyoming
Wendong Wang, University of Wyoming
Peter A. Dowben, University of Nebraska - Lincoln

Document Type

Conference Proceeding

Publication Date

2-16-2009

Abstract

Gd₂O₃ and HfO₂ films exhibit photovoltaic charging that depends on temperature. The dielectric properties of the surface and concomitant photovoltaic surface charging increases following oxygen exposure under ultrahigh vacuum conditions suggesting that the surface conductivity plays a role in the surface photovoltage charging.

Comments

Co-author D. Wooten was an AFIT PhD student at the time of this paper. (AFIT-DS-ENP-10-J01, June 2010)

Plain-text title form: Surface Charging of n-type Gd2O3 and HfO2 thin Films

DOI

10.1557/PROC-1111-D07-16

Source Publication

MRS Proceedings volume 1111 - Symposium D – Rare-Earth Doping of Advanced Materials for Photonic Applications

Recommended Citation

Wooten, D., Losovyj, Y.B., Petrosky, J. et al. Surface Charging of n-type Gd2O3 and HfO2 thin Films. MRS Online Proceedings Library 1111, 716 (2008). https://doi.org/10.1557/PROC-1111-D07-16