Mapping ground-state properties of silicon carbide molecular clusters using quantum mechanical calculations: SimCn and Sim Cn- (m, n ⩽ 4)
Document Type
Article
Publication Date
1-2010
Source Publication
Computational Materials Science (ISSN 0927-0256 | eISSN 1879-0801)
Recommended Citation
Duan, X., Wei, J., Burggraf, L., & Weeks, D. (2010). Mapping ground-state properties of silicon carbide molecular clusters using quantum mechanical calculations: SimCn and (M,n⩽4). Computational Materials Science, 47(3), 630–644. https://doi.org/10.1016/j.commatsci.2009.09.006
COinS
Comments
Co-author J. Wei was enrolled in an AFIT PhD program at the time of this article. (AFIT-DS-ENP-11-M02, March 2011)
Plain-text title form: Mapping ground-state properties of silicon carbide molecular clusters using quantum mechanical calculations: SimCn and Sim Cn- (m, n ≤ 4)