Effect of residence time on singlet oxygen production in microwave and RF discharges
Document Type
Conference Proceeding
Publication Date
10-8-2010
Abstract
The evolution of singlet oxygen inside both microwave and RF discharges of pure oxygen has been observed for residence times of 0.1–2 ms, achieving a steady value within 1 ms. The corresponding limiting yields decrease inversely with oxygen pressure in the range 2–8 Torr. A kinetic analysis is presented suggesting a second order process for the deactivation of 02(a) that scales with electron number density. The pseudo first order decay rates in a microwave discharge are high, ~6000 s-1 and slower in an RF discharge, 300-500 s-1. In both cases the decay rate is independent of oxygen pressure and flow rate. The role of vibrationally excited ground state oxygen is largely unexplored and may offers one possible mechanism. The results are consistent with a three‐body atomic oxygen reaction only if the electron number density increases with oxygen pressure, in contradiction to the reported modeling results. Abstract © AIP
Source Publication
AIP Conference Proceedings | International Symposium On High Power Laser Ablation 2010
Recommended Citation
Matthew A. Lange, Greg A. Pitz, Glen P. Perram; Effect of Residence Time on Singlet Oxygen Production in Microwave and RF Discharges. AIP Conf. Proc. 8 October 2010; 1278 (1): 482–491. https://doi.org/10.1063/1.3507137
Comments
© 2010 American Institute of Physics.
This conference paper was presented at the International Symposium On High Power Laser Ablation 2010, held 18–22 April 2010 in Santa Fe, New Mexico. It later appeared in a volume of AIP Conference Proceedings series as cited here.
Co-author G. Pitz was an AFIT PhD candidate at the time of this paper's presentation. (AFIT-DS-ENP-10-S05, September 2010)
Co-author M. Lange was an AFIT PhD student at the time of this paper. (AFIT-DS-ENP-11-S07, December 2011)