Electrical and Optical Characterization of Melt-Grown Bulk InAs_1-yP_y Crystals

Authors

Jean Wei, Air Force Research Laboratory
Jacob Barnes, Air Force Research Laboratory
Shekhar Guha, Air Force Research Laboratory
Leonel P. Gonzalez, Air Force Research Laboratory
Yung-Kee Yeo, Air Force Institute of Technology
Robert L. Hengehold, Air Force Institute of Technology
G. Rajagopalan, United Semiconductors, LLC

Document Type

Article

Publication Date

12-8-2010

Comments

Copyright © 2010, TMS (outside the USA)

The full article is accessible by subscription or purchase at the DOI link below.

Plain-text title form: Electrical and Optical Characterization of Melt-Grown Bulk InAs(1-y)P(y) Crystals

DOI

10.1007/s11664-010-1432-9

Source Publication

Journal of Electronic Materials (ISSN 0361-5235)

Recommended Citation

Wei, J., Barnes, J., Guha, S. et al. Electrical and Optical Characterization of Melt-Grown Bulk InAs1−y P y Crystals. J. Electron. Mater. 40, 103–108 (2011). https://doi.org/10.1007/s11664-010-1432-9