The debye temperature for hydrothermally grown ThO₂ single crystals

Authors

Tony D. Kelly, Air Force Institute of Technology
James C. Petrosky, Air Force Institute of Technology
John W. McClory, Air Force Institute of TechnologyFollow
Timothy W. C. Zens, Air Force Institute of Technology
David Turner, Air Force Institute of Technology
J. Matthew Mann, Air Force Research Laboratory
Joseph W. Kolis, Clemson University
Juan A. Colon Santana, University of Nebraska - Lincoln
Peter A. Dowben, University of Nebraska - Lincoln

Document Type

Article

Publication Date

10-1-2013

Abstract

The electronic properties of ThO₂ single crystals were studied using x-ray photoemission spectroscopy (XPS). The XPS results show that the Th 4f core level is in an oxidation state that is consistent with that expected for Th in ThO₂. The effective Debye temperature is estimated from the temperature dependent photoemission intensities of the Th 4f core level over the temperature range of 290 to 360 K. A Debye temperature of 468±32 K has been determined.

Comments

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Plain-text title form: The debye temperature for hydrothermally grown ThO2 single crystals

DOI

10.1557/opl.2013.996

Source Publication

MRS Proceedings (ISSN 1946-4274 | eISSN 0272-9172)

Recommended Citation

Kelly, T.D., Petrosky, J.C., McClory, J.W. et al. The Debye Temperature for Hydrothermally Grown ThO2 Single Crystals. MRS Online Proceedings Library 1576, 1003 (2013). https://doi.org/10.1557/opl.2013.996