The Local metallicity of gadolinium doped compound semiconductors
Document Type
Article
Publication Date
10-9-2012
Abstract
The local metallicities of Hf0.97Gd0.03O2, Ga0.97Gd0.03N, Eu0.97Gd0.04O and EuO films were studied through a comparison of the findings from constant initial state spectroscopy using synchrotron light. Resonant enhancements, corresponding to the 4d → 4f transitions of Eu and Gd, were observed in some of the valence band photoemission features. The resonant photoemission intensity enhancements for the Gd 4f photoemission features are far stronger for the more insulating host systems than for the metallic system Eu0.96Gd0.04O. The evidence seems to suggest a correlation between the effective screening in the films and the resonant photoemission process.
Source Publication
Journal of Physics: Condensed Matter (ISSN 0953-8984 | eISSN 1361-648X)
Recommended Citation
Colón Santana, J. A., Liu, P., Wang, X., Tang, J., McHale, S. R., Wooten, D., McClory, J. W., Petrosky, J. C., Wu, J., Palai, R., Losovjy, Y. B., & Dowben, P. A. (2012). The local metallicity of gadolinium doped compound semiconductors. Journal of Physics: Condensed Matter, 24(44), 445801. https://doi.org/10.1088/0953-8984/24/44/445801
IOP citation format: J A Colón Santana et al 2012 J. Phys.: Condens. Matter 24 445801
Comments
© 2012 IOP Publishing Ltd
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