Impact of amorphous pockets on displacement damage evolution in silicon

Authors

Henry R. Little, MST-8, Los Alamos National Laboratory
Blas P. Uberauga, MST-8, Los Alamos National Laboratory
Christopher Matthews, MST-8, Los Alamos National Laboratory
Xiang-Yang Liu, MST-8, Los Alamos National Laboratory
Christopher A. Lenyk, Air Force Institute of TechnologyFollow

Document Type

Article

Publication Date

9-24-2025

Abstract

Excerpt: Silicon has long been known to exhibit amorphization in response to heavy particle bombardment. For doses below the total amorphization threshold, partial amorphization is observed in the form of scattered amorphous pockets. While extensive research has gone into modeling the formation and evolution of amorphous pockets in response to irradiation, no studies yet investigate their impact on the evolution of other damage such as interstitial supersaturation and clustering. In this study, we survey the impact of amorphous pockets on defect evolution in silicon when treated as static sinks. Abstract © Elsevier.

A graphical abstract of this work is openly available at the DOI link.

Comments

This article is published by Elsevier, and is accessible by subscription or purchase at the DOI link below.

The article was published online in September 2025 as an article of Computational Materials Science ahead of inclusion in volume 261 of that journal, to be issued in January 2026.

DOI

10.1016/j.commatsci.2025.114255

Source Publication

Computational Materials Science (ISSN 0927-0256)

Recommended Citation

Little, H. R., Uberuaga, B. P., Matthews, C., Liu, X.-Y., & Lenyk, C. A. (2026). Impact of amorphous pockets on displacement damage evolution in silicon. Computational Materials Science, 261, 114255. https://doi.org/10.1016/j.commatsci.2025.114255