Electrical characterization studies of p-type Ge, Ge1-y Sn y, and Si0.09Ge0.882Sn0.028 grown on n-Si substrates
Document Type
Article
Publication Date
3-14-2014
Source Publication
Current Applied Physics (ISSN 1567-1739)
Recommended Citation
Harris, T. R., Ryu, M.-Y., Yeo, Y. K., Beeler, R. T., & Kouvetakis, J. (2014). Electrical characterization studies of p-type Ge, Ge1-y Sn y, and Si0.09Ge0.882Sn0.028 grown on n-Si substrates. Current Applied Physics, 14(S1), S123–S128. https://doi.org/10.1016/j.cap.2013.11.009
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Comments
Plain-text title form: Electrical characterization studies of p-type Ge, Ge1-y Sn y, and Si0.09Ge0.882Sn0.028 grown on n-Si substrates