Electrical characterization studies of p-type Ge, Ge_1-y Sn _y, and Si_0.09Ge_0.882Sn_0.028 grown on n-Si substrates

Authors

• Thomas R. Harris, Air Force Institute of Technology
• Mee-Yi Ryu, Kangwon National University
• Yung Kee Yeo, Air Force Institute of Technology
• Richard T. Beeler, Arizona State University
• John Kouvetakis, Arizona State University

Document Type

Article

Publication Date

3-14-2014

Comments

The full article is available via subscription or purchase, using the DOI link on the page.

Co-author Thomas Harris was completing an AFIT PhD program at the time of this article. (AFIT-ENP-DS-14-M-04, March 2014 graduation)

Plain-text title form: Electrical characterization studies of p-type Ge, Ge1-y Sn y, and Si0.09Ge0.882Sn0.028 grown on n-Si substrates

DOI

10.1016/j.cap.2013.11.009

Source Publication

Current Applied Physics (ISSN 1567-1739 | eISSN 1878-1675)

Recommended Citation

Harris, T. R., Ryu, M.-Y., Yeo, Y. K., Beeler, R. T., & Kouvetakis, J. (2014). Electrical characterization studies of p-type Ge, Ge1-y Sn y, and Si0.09Ge0.882Sn0.028 grown on n-Si substrates. Current Applied Physics, 14(S1), S123–S128. https://doi.org/10.1016/j.cap.2013.11.009