Germanium Telluride (GeTe) phase change resistors for reconfigurable circuit applications

Authors

James M. Sattler, Air Force Institute of Technology
Ronald A. Coutu Jr., Air Force Institute of Technology

Document Type

Conference Proceeding

Publication Date

6-15-2015

Abstract

Excerpt: In this paper, we report on the electrical properties of the phase change (PC) material, Germanium Telluride (GeTe), and discuss the fabrication and testing of GeTe resistors.

Comments

Copyright © 2015, IEEE.

This conference paper is available through subscription or purchase from the publisher, IEEE, using the DOI link below.

DOI

10.1109/NAECON.2015.7443071

Source Publication

Proceedings of the IEEE National Aerospace Electronics Conference, NAECON

Recommended Citation

J. M. Sattler and R. A. Coutu, "Germanium Telluride (GeTe) phase change resistors for reconfigurable circuit applications," 2015 National Aerospace and Electronics Conference (NAECON), Dayton, OH, USA, 2015, pp. 224-227, doi: 10.1109/NAECON.2015.7443071.