The Effects of proton irradiation on the current–voltage and capacitance–voltage characteristics of GeSn/Si photodiodes

Authors

• Kevin K. Choe, Air Force Institute of Technology
• John W. McClory, Air Force Institute of TechnologyFollow
• Ryan A. Kemnitz, Air Force Institute of TechnologyFollow
• Christina L. Dugan, Air Force Institute of TechnologyFollow

Document Type

Article

Publication Date

1-3-2025

Comments

This article is accessible by subscription through the DOI link below.

Funding note: This study was funded by AFOSR, LRIR 24RYCOR012.

DOI

10.1557/s43580-024-01103-9

Source Publication

MRS Advances (e-ISSN 2059-8521)

Recommended Citation

Choe, K.K., McClory, J.W., Kemnitz, R.A. et al. The effects of proton irradiation on the current–voltage and capacitance–voltage characteristics of GeSn/Si photodiodes. MRS Advances 10, 1702–1709 (2025). https://doi.org/10.1557/s43580-024-01103-9