Impacts of Heavy Particle Irradiation on Very High Frequency Microelectromechanical Resonators

Authors

David D. Lynes, Air Force Institute of Technology
Eric Lang, The University of New Mexico
Joshua Young, Sandia National Laboratories
Hengky Chandrahalim, Air Force Institute of TechnologyFollow

Document Type

Conference Proceeding

Publication Date

11-7-2023

Abstract

This study explores the interrelationship between silicon ion irradiation and piezoelectrically-actuated microelectromechanical systems (MEMS) resonators. Specifically, it assesses the effect of incorporating a thin silicon oxide (SiO₂) dielectric layer into the resonator structure. The MEMS resonators engineered for this investigation include Aluminum Nitride on Silicon (AlN-on-Si) and AlN-SiO₂-Si width extensional mode (WEM) types. These devices underwent irradiation with 2 MeV Si⁺ ions at a total fluence of 5 x 10¹⁴ ions cm^-2. On-site S-parameter measurements were conducted. The research quantitatively outlines radiation-induced damage coefficients, elucidating their influence on key performance metrics such as resonant frequency (f_r), quality factor (Q), motional resistance (R_m), and electromechanical coupling factor ((k_eff²).

Comments

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DOI

10.1109/IUS51837.2023.10307562

Source Publication

IEEE International Ultrasonics Symposium Proceedings (IUS 2023)

Recommended Citation

D. D. Lynes, J. Young, E. Lang and H. Chandrahalim, "Impacts of Heavy Particle Irradiation on Very High Frequency Microelectromechanical Resonators," 2023 IEEE International Ultrasonics Symposium (IUS), Montreal, QC, Canada, 2023, pp. 1-4, doi: 10.1109/IUS51837.2023.10307562.