Control of Surface States in GaSb/Al(x)Ga(l-x)As(y)Sb(l-y)/Ga(x)In(l-x)Sb/Al(x)Ga(l-x)As(y)Sb(1-y) Quantum Well Structures

Authors

D. K. Johnstone, Air Force Institute of Technology
Yung Kee Yeo, Air Force Institute of Technology
Robert L. Hengehold, Air Force Institute of Technology
G. W. Turner, MIT Lincoln Laboratory

Document Type

Article

Publication Date

11-1999

Comments

© 1999 American Institute of Physics.

The article appears in volume 75 of Applied Physics Letters as fully cited below, and is available by subscription at the DOI linked on this site.

DOI

10.1063/1.125147

Source Publication

Applied Physics Letters

Recommended Citation

D. K. Johnstone, Y. K. Yeo, R. L. Hengehold, G. W. Turner; Control of surface states in GaSb/AlxGa1−xAsySb1−y/GaxIn1−xSb/AlxGa1−xAsySb1−y quantum well structures. Appl. Phys. Lett. 1 November 1999; 75 (18): 2779–2781. https://doi.org/10.1063/1.125147