Document Type
Article
Publication Date
5-2013
Abstract
Temperature (T)-dependent photoluminescence (PL) has been investigated for both p-Ge and n-Ge1-ySny films grown on Si substrates. For the p-Ge, strong direct bandgap (ED) along with weak indirect bandgap related (EID) PL at low temperatures (LTs) and strong ED PL at room temperature (RT) were observed. In contrast, for the n-Ge1-ySny, very strong dominant EID PL at LT and strong ED PL were observed at RT. This T-dependent PL study indicates that the indirect-to-direct bandgap transitions of Ge1-ySny might take place at much lower Sn contents than the theory predicts, suggesting that these Ge1-ySny could become very promising direct bandgap semiconductors.
Source Publication
Applied Physics Letters
Recommended Citation
Mee-Yi Ryu, Tom R. Harris, Y. K. Yeo, R. T. Beeler, J. Kouvetakis; Temperature-dependent photoluminescence of Ge/Si and Ge1-ySny/Si, indicating possible indirect-to-direct bandgap transition at lower Sn content. Appl. Phys. Lett. 29 April 2013; 102 (17): 171908. https://doi.org/10.1063/1.4803927
Comments
© 2013 AIP Publishing LLC, published under an exclusive license with American Institute of Physics.
AFIT Scholar, as the repository of the Air Force Institute of Technology, furnishes the published Version of Record for this article in accordance with the sharing policy of the publisher, AIP Publishing. A 12-month embargo was observed.
This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Applied Physics Letters 102: 171908. as fully cited below and may be found at DOI: 10.1063/1.4803927.