"Synergistic Effects of Neutron and Gamma Radiations on the Electrical " by Jackson T. Piechowski

Date of Award

3-2024

Document Type

Thesis

Degree Name

Master of Science

Department

Department of Electrical and Computer Engineering

First Advisor

Anil K. Patnaik, PhD

Abstract

In many radiation environments, electronic assets are exposed to a wide variety of species of radiation. This thesis studies the effect of sequential exposure of MOSFETs to neutron and gamma radiation. 27 Goford Semiconductor GT060N04T MOSFETs with gate thickness ∼500 nm were exposed to gamma radiation from a Cesium-137 source and mixed gamma and neutron radiation from a Californium-252 source with total amounts of ionizing radiation dose, neutron fluence, and order of irradiation varied to determine if synergistic effects of neutron and gamma irradiation can be measured. Neutron fluence values as low as 3.45x109 and as high as 3.40x1010 neutrons/cm2 and Cesium-137 gamma dose of up to 200 rad were used. Comparison of the effect of neutron irradiation in fresh MOSFETs versus MOSFETs previously irradiated by gamma rays from the Cesium-137 source shows strong evidence of synergistic effects, with the threshold voltage shift after Californium-252 irradiation being on average 24 ± 28 fV/(neutron/cm2) in the fresh MOSFETs and 71 ± 18 fV/(neutron/cm2) in the pre-irradiated MOSFETs.

AFIT Designator

AFIT-ENG-MS-24-M-049

Comments

A 12-month embargo was observed for posting this work on AFIT Scholar.

Distribution Statement A, Approved for Public Release. PA case number on file.

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