Abstract
This invention provides a process for producing high-purity dense polycrystalline III-nitride slabs. A vessel which contains a group III-metal such as gallium or an alloy of group III-metals of shallow depth is placed in a reactor. The group III-metal or alloy is heated until a molten state is reached after which a halide-containing source mixed with a carrier gas and a nitrogen-containing source is flowed through the reactor vessel. An initial porous crust of III-nitride forms on the surface of the molten III-metal or alloy which reacts with the nitrogen-containing source and the halide-containing source. The flow rate of the nitrogen-containing source is then increased and flowed into contact with the molten metal to produce a dense polycrystalline III-nitride. The products produced from the inventive process can be used as source material for III-nitride single crystal growth which material is not available naturally.
Document Type
Patent
Status
Issued
Issue Date
10-14-2014
Patent Number
US 8858708 [ 8,858,708 ] ; US8858708B1
CPC Classification
C 30 B 35/007
Application number
12/817548
Assignees
The United States of America As represented by the Secretary of the Air Force
Filing Date
6-17-2010
Recommended Citation
Callahan, M. J., Wang, B., & Bailey, J. S. (2014). Polycrystalline III-Nitrides (United States Patent No. US8858708B1). https://scholar.afit.edu/patents/99