Abstract
An interdigitated back-contact vertical-junction solar cell which utilizes an anisotropically etched 110-oriented silicon crystal wafer. The cell structure includes rounded corner top edges of the between cell channel walls in order to improve light capturing ability and also has pn-junctions disposed over all of the cavity internal surfaces. Additional pn-junctions are located on the rear surface of the cell array to assist in generated carrier collection into a rear mounted metallic conductor grid. The disclosed cell has desirable transducer efficiency, without the use of anti-reflection coatings, and previous improved physical robustness, and radiation hardening. Fabrication of the cell array includes an isotropic etch of the cell dividers and the anisotropic etching to form cell cavities.
Document Type
Patent
Status
Issued
Issue Date
11-26-1991
Patent Number
US 5067985 A
CPC Classification
H 01 L 31/02363
Application number
07/534981
Assignees
The United States of America as represented by the Secretary of the Air Force, Washington, D.C.
Filing Date
6-6-1990
Recommended Citation
Carver, M. W. & Edward S. Kolesar, Jr. Back-contact Vertical-junction Solar Cell And Method. United States Patent 5067985, granted 26 November 1991.