Abstract

A novel fabrication process uses a combination of negative and positive photoresists with positive tone photomasks, resulting in masking layers suitable for bulk micromachining high-aspect ratio microelectromechanical systems (MEMS) devices. This technique allows the use of positive photomasks with negative resists, opening the door to an ability to create complementary mechanical structures without the fabrication delays and costs associated with having to obtain a negative photomask. In addition, whereas an SU-8 mask would normally be left in place after processing, a technique utilizing a positive photoresist as a release layer has been developed so that the SU-8 masking material can be removed post-etching.

Document Type

Patent

Status

Issued

Issue Date

11-5-2013

Patent Number

US 8574821 B1 [8,574,821]

CPC Classification

G03F7/2016

Application number

13/333169

Assignees

Government of the United States, as represented by the Secretary of the Air Force, Wright-Patterson AFB, OH (US)

Filing Date

12-21-2011

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