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Cadmium silicon diphosphide (CdSiP2) is a nonlinear material often used in optical parametric oscillators (OPOs) to produce tunable laser output in the mid-infrared. Absorption bands associated with donors and acceptors may overlap the pump wavelength and adversely affect the performance of these OPOs. In the present investigation, electron paramagnetic resonance (EPR) is used to identify two unintentionally present acceptors in large CdSiP2 crystals. These are an intrinsic silicon-on-phosphorus antisite and a copper impurity substituting for cadmium. When exposed to 633 µm laser light at temperatures near or below 80 K, they convert to their neutral paramagnetic charge states (Si0P and Cu0Cd) and can be monitored with EPR. The corresponding donor serving as the electron trap is the silicon-on-cadmium antisite (Si2+Cd before illumination and Si+Cd after illumination). Removing the 633 µm light and warming the crystal above 90 K quickly destroys the EPR signals from both acceptors and the associated donor. Broad optical absorption bands peaking near 0.8 and 1.4 μm are also produced at low temperature by the 633 µm light. These absorption bands are associated with the Si0P and Cu0Cd acceptors.


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AIP Advances