Title

PZT transduced high-overtone width-extensional resonators above 1 GHz

Document Type

Conference Proceeding

Publication Date

2009

Abstract

This paper provides the theoretical modeling, simulation, and quantitative comparison that explore the design space of PZT-only (Lead Zirconate Titanate) and PZT-on 3, 5 and 10 μm single-crystal silicon high-overtone width-extensional mode (WEM) resonators with identical lateral dimensions for incorporation into radio frequency microelectromechanical systems (RF MEMS) filters and oscillators. A novel fabrication technique was developed to fabricate the resonators with and without silicon layer using the same mask-set on the same wafer. The air-bridge metal routings were implemented to carry electrical signals while avoiding large capacitances from the bond-pads. We theoretically verified and experimentally measured the correlation of motional impedance (RX), quality factor (Q), and resonance frequency (f) with the resonators' silicon layer thickness (tSi) up to above 1 GHz frequency of operation. For identical lateral dimensions and PZT-layer thickness (tPZT), the resonators with thicker silicon layer have higher f. The resonators with thicker silicon also have higher Q and lower RX up to 900 MHz frequency.

Comments

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DOI

10.1109/ULTSYM.2009.5441468

Source Publication

IEEE International Ultrasonics Symposium 2009

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