PZT transduced high-overtone width-extensional resonators above 1 GHz

Document Type

Conference Proceeding

Publication Date



This paper provides the theoretical modeling, simulation, and quantitative comparison that explore the design space of PZT-only (Lead Zirconate Titanate) and PZT-on 3, 5 and 10 μm single-crystal silicon high-overtone width-extensional mode (WEM) resonators with identical lateral dimensions for incorporation into radio frequency microelectromechanical systems (RF MEMS) filters and oscillators. A novel fabrication technique was developed to fabricate the resonators with and without silicon layer using the same mask-set on the same wafer. The air-bridge metal routings were implemented to carry electrical signals while avoiding large capacitances from the bond-pads. We theoretically verified and experimentally measured the correlation of motional impedance (RX), quality factor (Q), and resonance frequency (f) with the resonators' silicon layer thickness (tSi) up to above 1 GHz frequency of operation. For identical lateral dimensions and PZT-layer thickness (tPZT), the resonators with thicker silicon layer have higher f. The resonators with thicker silicon also have higher Q and lower RX up to 900 MHz frequency.


This is a subscription-access conference paper. The "Link to Full Text" button at the right of this screen is for AFIT students, faculty and staff.

Readers outside of AFIT will need to access the article through their own digital subscription to IEEE Electronic Library. Link for readers not actively affiliated with AFIT.



Source Publication

IEEE International Ultrasonics Symposium 2009