Electrical characterization studies of p-type Ge, Ge_1-ySn_y, and Si_0.09Ge_0.882Sn_0.028 grown on n-Si substrates

Thomas R. Harris, Air Force Institute of Technology
Mee-Yi Ryu, Kangwon National University
Yung-Kee Yeo, Air Force Institute of Technology
Richard T. Beeler, Arizona State University
John Kouvetakis, Arizona State University

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Co-author Thomas Harris was completing an AFIT PhD program at the time of this article. (AFIT-ENP-DS-14-M-04, March 2014 graduation)

Plain text title form: Electrical characterization studies of p-type Ge, Ge1-y Sn y, and Si0.09Ge0.882Sn0.028 grown on n-Si substrates

Abstract

Investigation of electrical properties of p-GeSn/n-Si as a function of temperature.