Document Type

Article

Publication Date

1-17-2014

Abstract

The gain-lever effect enhances the modulation efficiency of a semiconductor laser when compared to modulating the entire laser. This technique is investigated in a long-cavity multi-section quantum-dot laser where the length of the modulation section is varied to achieve 14:2, 15:1 and 0:16 gain-to-modulation section ratios. In this work, the gain-levered modulation configuration resulted in an increase in modulation efficiency by as much as 16 dB. This investigation also found that the 3-dB modulation bandwidth and modulation efficiency are dependent on the modulation section length of the device, indicating the existence of an optimal gain-to-modulation section ratio. The long cavity length of the multi-section laser yielded a distinctive case where characteristics of both the gain-lever effect and spatial effects are observed in the modulation response. Here, spatial effects within the cavity dominated the small-signal modulation response close to and above the cavity’s free-spectral range frequency, whereas the gain-lever effect influenced the modulation response throughout the entirety of the response.

Comments

Sourced from the publisher version of record at Optical Scociety of America Publishing:
Pochet, M. C., Usechak, N. G., Schmidt, J., & Lester, L. F. (2014). Modulation response of a long-cavity, gainlevered quantum-dot semiconductor laser. Optics Express, 22(2), 1726–1734. https://doi.org/10.1364/OE.22.001726

Posted on AFIT Scholar in accordance with Gold Open Access Policy Statement for Optics Express, found at: https://www.osapublishing.org/submit/review/open-access-policy-statement.cfm (12-month embargo observed). All further rights reserved by the publisher. © 2014 Optical Society of America

DOI

10.1364/OE.22.001726

Source Publication

Optics Express

Included in

Optics Commons

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